Electronic properties and atomic structure of Mg-doped multilayer g-GaN base on first-principles

Theoretical research on p‐type doping two‐dimensional GaN based on first‐principles study

(2020) Jian Tian et al.   INTERNATIONAL JOURNAL OF ENERGY RESEARCH

Electronic and optical properties of janus MoSSe and ZnO vdWs heterostructures

(2020) Zhen Cui et al.   SUPERLATTICES AND MICROSTRUCTURES

Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures

(2019) Wenliang Wang et al.   Small

Adsorption of toxic gas molecules on pristine and transition metal doped hexagonal GaN monolayer: A first-principles study

(2019) Guo-Xiang Chen et al.   VACUUM

Optoelectronic properties of two-dimensional GaN adsorbed with H, N and O: A first-principle study

(2019) Jian Tian et al.   PHYSICS LETTERS A

Research on quantum efficiency of GaN monolayer reflection-mode photocathode with atomically ultra-thin emission layer

(2019) Jian Tian et al.   OPTICS COMMUNICATIONS

Research on quantum efficiency of exponential-doping GaN monolayer reflection-mode photocathode with ultra-thin emission layer

(2019) Jian Tian et al.   Applied Nanoscience

Electronic, magnetism, and optical properties of transition metals adsorbed g-GaN

(2019) Zhen Cui et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties

(2018) Zhen Cui et al.   Nanoscale Research Letters

Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties

(2018) Zhen Cui et al.   Nanoscale Research Letters

Exploration the p-type doping mechanism of GaAs nanowires from first-principles study

(2018) Yu Diao et al.   PHYSICS LETTERS A

Doping process of p-type GaN nanowires: A first principle study

(2017) Sihao Xia et al.   JOURNAL OF APPLIED PHYSICS

Doping of III-nitride materials

(2017) Pietro Pampili et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Structural, electronic, and magnetic properties of 3d transition metal doped GaN nanosheet: A first-principles study

(2016) Guo-Xiang Chen et al.   INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY

Two-dimensional gallium nitride realized via graphene encapsulation

(2016) Zakaria Y. Al Balushi et al.   NATURE MATERIALS

Ultrathin Two-Dimensional Nanomaterials

(2015) Hua Zhang   ACS Nano

Two-Dimensional Cu2Si Monolayer with Planar Hexacoordinate Copper and Silicon Bonding

(2015) Li-Ming Yang et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Post-anti-van't Hoff-Le Bel motif in atomically thin germanium–copper alloy film

(2015) Li-Ming Yang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

(2013) Congxin Xia et al.   ACTA MATERIALIA

Stacking and electric field effects in atomically thin layers of GaN

(2013) Dongwei Xu et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

High-efficiency graded band-gap AlxGa1−xAs/GaAs photocathodes grown by metalorganic chemical vapor deposition

(2011) Yijun Zhang et al.   APPLIED PHYSICS LETTERS

Photoemission of graded-doping GaN photocathode

(2011) Xiao-Qian Fu et al.   Chinese Physics B

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations

(2009) H. Şahin et al.   PHYSICAL REVIEW B

Ab initio study of [001] GaN nanowires

(2008) B. K. Agrawal et al.   JOURNAL OF NANOPARTICLE RESEARCH