Comprehensive optimization of electronic and optical properties of polar III-nitride laser

A detailed investigation is performed to obtain optimized optical performance of polar III-nitride single quantum well (SQW) semiconductor lasers by band engineering through symmetric and asymmetric tuning of device parameters. Electronic, optical, and threshold characteristics are calculated to analyze the effects of band engineering on device performance. Here, the InN-In0.25Ga0.75 N SQW structure is chosen as a case study. This work shows a significant improvement in optical properties from higher wavefunction overlap integral obtained from band modification due to the tuning which also provides higher momentum matrix elements, spontaneous emission rate, and optical gain, as well. The maximum TE-polarized optical gain for the symmetric structure is found as around 6291 cm(-1) for 6 angstrom well width and 6 angstrom barrier width at 710 nm, while for asymmetric laser structure, a maximum TE-polarized optical gain of around 6225 cm(-1) at around 800 nm is observed for 6 angstrom well width with asymmetric barrier width of 6 angstrom and 8 angstrom. The optimization is carried out over 500-1600 nm wavelength range to obtain the optimum structure for maximum optical performance at different wavelengths. A time-efficient genetic algorithm-based optimization is also performed that provides the same optimization results in reduced time.

Automated summary

A detailed investigation into optimized optical performance of polar III-nitride single quantum well (SQW) semiconductor lasers is conducted by band engineering through symmetric and asymmetric tuning of device parameters. The study shows a significant improvement in optical properties, with both symmetric and asymmetric structures achieving high TE-polarized optical gain.