Perovskite Light-Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI(3) are shown to be able to work perfectly at low temperatures. A peak external quantum efficiency (EQE) of 32.8%, corresponding to an internal quantum efficiency of 100%, is achieved at 45 K. Importantly, the devices show almost no degradation after working at a constant current density of 200 mA m(-2) for 330 h. The enhanced EQEs at low temperatures result from the increased photoluminescence quantum efficiencies of the perovskite, which is caused by the increased radiative recombination rate. Spectroscopic and calculation results suggest that the phase transitions of the FAPbI(3) play an important role for the enhancement of exciton binding energy, which increases the recombination rate.

Automated summary

Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI(3) exhibit excellent performance at low temperatures, with increased quantum efficiency and stability. The enhanced EQE at low temperatures is attributed to the increased photoluminescence quantum efficiencies of the perovskite, leading to an increased radiative recombination rate.