Journal
NPJ 2D MATERIALS AND APPLICATIONS
Volume 5, Issue 1, Pages -Publisher
NATURE PORTFOLIO
DOI: 10.1038/s41699-020-00184-y
Keywords
-
Funding
- Ministry of Science and Technology of China through the National Key Research and Development Program of China [2017YFA0303304, 2016YFA0300601, 2017YFA0204901, 2016YFA0300802]
- National Natural Science Foundation of China [11874071, 91221202, 91421303, 11274021, 61974138]
- Beijing Academy of Quantum Information Sciences [Y18G22]
- Youth Innovation Promotion Association of the Chinese Academy of Sciences [2017156]
Ask authors/readers for more resources
A dual-gate InSb nanosheet field-effect device is used to investigate the controllability of spin-orbit interaction in InSb nanosheet, demonstrating efficient tuning of the interaction. The presence of intrinsic spin-orbit interaction in InSb nanosheet is identified at zero dual-gate voltage, with its physical origin attributed to built-in asymmetry in the device layer structure.
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
