Journal
2D MATERIALS
Volume 8, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/abd90a
Keywords
reconfigurable optical memory; mix-dimensional van der Waals heterostructure; MoS2; quantum dots
Categories
Funding
- National Natural Science Foundation of China [52072204, 51672154, 61705152]
- National Key R&D Program of China [2016YFA0200200]
- National Postdoctoral Program for Innovative Talents of China [BX20200049]
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In this study, a reconfigurable optical memory based on MoS2/quantum dots mixed-dimensional heterostructure is demonstrated to achieve high programming/erasing ratio, long retention time, and stable operation cycles that can be gate-tunable. Multi-level optical data storage with ten different states is realized by applying a series of programmable optical signals. The proposed optical memory transistor in low-dimensional system shows promising potential for exploring photoelectric conversion and developing high-performance optoelectronics for various applications.
Optical memory unit with the ability to detect and store optical signals is increasingly becoming a crucial part of advanced data communication and image sensing technology. Despite great efforts devoted to develop high-performance optical memory devices based on two-dimensional (2D) material, the photoelectric conversion is still limited to defect-dominant photo-generated carrier trapping/de-trapping process at the interface of 2D materials. Here, a reconfigurable optical memory implanted with photonic programming/electric erasing operation is demonstrated based on MoS2/quantum dots (QDs) mixed-dimensional heterostructure. Unique photoelectric coupling effect between MoS2 and QDs leads to a continuous n-doping on MoS2 channel after light exposure removed, resulting in the generation of persistent photocurrent. Excellent optical memory characteristics such as high programming/erasing ratio, long retention time and stable operation cycles have been achieved and demonstrated to be gate-tunable. Besides, multi-level optical data storage with ten different states is also realized by applying a series of programmable optical signals. Owing to the unique dynamic response of mix-dimensional van der Waals heterostructure to optical and electric signals, our proposed optical memory transistor may pave up a new path to explore photoelectric conversion in low-dimensional system and develop high-performance optoelectronics for a broad range of applications.
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