4.8 Article

Surface charge-transfer doping for highly efficient perovskite solar cells

Journal

NANO ENERGY
Volume 79, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.nanoen.2020.105505

Keywords

Perovskite solar cells; Nonradiative recombination; Energetics; Doping

Funding

  1. National Science Foundation of China [21875067, 51811530011, 11604099]
  2. Fundamental Research Funds for the Central Universities
  3. Shanghai Rising-Star [19QA1403100]
  4. East China Normal University (ECNU) Multifunctional Platform for Innovation [006]
  5. ECNU future scientist project [WLKXJ2019]
  6. National Key Research and Development Program of China [2017YFA0206600]
  7. National Natural Science Foundation of China [51773045, 21772030, 51922032, 21961160720]
  8. Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University, Sweden (Faculty Grant SFO Mat LiU) [2009 00971]

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Introducing TBAPF(6) modifier successfully changed the surface properties of the perovskite film, transforming it from p-type to n-type, promoting an increase in electron carrier density and charge transport, effectively suppressing nonradiative recombination, and improving device power conversion efficiency.
Nonradiative recombination losses are the predominant reason that limits the full thermodynamic potential of perovskite solar cells (PSCs), mainly originating from surface defects and interfacial energetics. However, their synergies between the two key factors are poorly understood. Herein, we systemically explore the energetic role of ionic liquid defect-passivator Tetrabutylammonium hexafluorophosphate (TBAPF(6)) on n-i-p planar PSCs. The perovskite film surface has been transformed from p-type to n-type after TBAPF(6) modification, evidenced by a shift of Fermi level closer to the conduction band. The n-type energetics result in a higher density of electron carrier and a smaller electron extraction barrier at perovskite/PCBM interface, promoting charge transport. It is also shown that the perovskite film can undergo a clear transformation from n-type to p-type character as increasing work function of substrates. Further studies clearly illustrate that TBAPF(6) not only reduces the surface defect-assisted recombination, but also restrains the interface carrier recombination. These combined effects lead to the effective suppression of nonradiative recombination, attributing to a significant improvement in the device power conversion efficiency.

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