Journal
NANO ENERGY
Volume 78, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.nanoen.2020.105312
Keywords
GaN; Micro/nanowire; Piezotronics; Sensory memory; Artificial intelligence
Categories
Funding
- National Key Research and Development Program of China [2016YFA0202703]
- National Natural Science Foundation of China [61904012, 61704008, 51622205, 61675027, 61505010, 51502018]
- Beijing City Committee of science and technology [Z171100002017019, Z181100004418004]
- Natural Science Foundation of Beijing Municipality [4204114, 4181004, 4182080, 4184110, 2184131, Z180011]
- University of Chinese Academy of Sciences
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Skin-inspired electronic devices that can store and retain impressions of sensory information after the removal of external stimuli are showing great significance for artificial sensory systems. Here, a single GaN microwire-based piezotronic sensory memory device (SMD) is presented to sense and memorize the impressions of tactile information. The SMD is capable to be programmed into a high resistance state by inputting external strain, and reversibly erased back to the low resistance state with an electrical voltage. Due to the piezotronic effect, the piezo-potential induced by compressive strain would cause the dissolution/redistribution of conductive channels of nitrogen vacancies in the bamboo-shaped GaN microwire. Furthermore, the SMD array demonstrates a distinct spatial mapping of external strain sensing and retaining with the operations of strain program and electrical erase. The single micro/nanowire-based sensory memory device will have great applications in the field of tactile sensation, touchable haptic technologies, and bio-realistic artificial intelligence systems.
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