Silicon Nitride Back Barrier in AlGaN/GaN HEMT to Enhance Breakdown Voltage for Satellite Applications

Silicon Nitride (SiN) Back Barrier is proposed and investigated for GaN based High Electron Mobility Transistor (HEMT) to improve the breakdown voltage. The investigation is carried out using Technology Computer Aided Design (TCAD) simulator. The proposed device is yield higher breakdown voltage than the conventional device by 32 V. It is attributed to the reduction of punch-through current by SiN Back Barrier. The proposed device also recorded a peak transconductance of 325 mS/mm. Further, the vertical leakage current of the proposed device is lower than the conventional device. As proposed device demonstrate the higher breakdown voltage, it is a promising candidate for satellite high power electronic application.

Automated summary

By introducing Silicon Nitride (SiN) Back Barrier in GaN-based HEMT, the breakdown voltage of the device was increased, while the punch-through current was reduced and the peak transconductance was improved. Therefore, the proposed device shows promise for high power electronic applications in satellites.