Journal
AIP ADVANCES
Volume 10, Issue 12, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0030098
Keywords
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Funding
- National Science Foundation [DMR-PREM-1523463, DMR-RUI-1800262, NNCI-1542153]
- NSF MRSEC [DMR-1720530]
- NSF Major Research Instrumentation [DMR-0923245]
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Monolayer MoS2 crystals investigated in this work were grown via chemical vapor deposition on Si/SiO2 substrates. Using a wet KOH etch, these crystals were transferred onto the edge of a freshly cleaved p-Si/SiO2 wafer where they formed mechanically robust heterojunctions at the p-Si/MoS2 interface. Electrical characterization of the device across the junction yielded an asymmetric I-V response similar to that of a p-n diode. The I-V response was electrostatically tunable via an ionic liquid gel gate. This is the first report demonstrating reversible gate control of the p-Si/MoS2 diode current by several orders of magnitude while lowering its turn-on voltage. Fermi energy level shifts within the MoS2 bandgap by the gate was believed to be responsible for the observed effects. The ease of fabrication, low operating voltages (<2 V), and moderately high throughput currents (similar to 1 mu A) are attractive features of this diode, especially for use in sensors and power saving electronics.
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