Determination of the interface between amorphous insulator and crystalline 4H–SiC in transmission electron microscope image by using convolutional neural network

Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide

(2019) Munetaka Noguchi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Deep Convolutional Neural Networks for Image Classification: A Comprehensive Review

(2017) Waseem Rawat et al.   NEURAL COMPUTATION

Structure and chemistry of passivated SiC/SiO2 interfaces

(2016) J. Houston Dycus et al.   APPLIED PHYSICS LETTERS

Reduction of interface states by hydrogen treatment at the aluminum oxide/4H-SiC Si-face interface

(2016)   AIP Advances

Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

(2015) Viktoryia Uhnevionak et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Deep learning

(2015) Yann LeCun et al.   NATURE

Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

(2012) Patrick Fiorenza et al.   JOURNAL OF APPLIED PHYSICS

A Novel Characterization Scheme of $\hbox{Si/SiO}_{2}$ Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

(2010) Yi Zhao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

(2010) S. Dhar et al.   JOURNAL OF APPLIED PHYSICS