High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity

Title
High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity
Authors
Keywords
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Journal
IEEE Photonics Journal
Volume 12, Issue 6, Pages 1-12
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-11-17
DOI
10.1109/jphot.2020.3037834

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