Study of CuSbSe2 thin films grown by pulsed laser deposition from bulk source material

In this paper, we discuss the details of growth of CuSbSe2 chalcostibite thin films via pulsed laser deposition using bulk ball milled compound. Thin film growth conditions, in particular pulsed laser energy was optimized to obtain the near stoichiometric thin films. Films were grown at room temperature as well as at 400 degrees C and as grown films were post annealed at 400 degrees C to see annealed induced effects. Material characteristics of the thin films were evaluated in detail using X-ray diffraction, X-ray photoelectron spectroscopy, UV-Vis-NIR spectros-copy and Raman spectroscopy studies. Scanning electron microscopy and dynamic force microscope measurements revealed the morphology as well as smoothness of the thin films. Hall coefficient values measured positive and carrier concentration value of 1.2 x 10(18) cm(-3) for the films grown at 400 degrees C. Absorption coefficient values of the order of similar to 10(5) cm(-1) in the entire visible region and band gap of similar to 1.2 eV observed infer favorable photovoltaic characteristics.

Automated summary

In this paper, CuSbSe2 chalcostibite thin films were successfully grown via pulsed laser deposition using bulk ball milled compound. The thin films exhibited near stoichiometry and favorable photovoltaic characteristics, with a band gap of around 1.2 eV observed. Material characteristics were evaluated using various techniques, including X-ray diffraction and spectroscopy studies.