Article
Engineering, Electrical & Electronic
Xue Chen, Jiaxian Wan, Juan Gao, Hao Wu, Chang Liu
Summary: In this study, a novel method to improve the stability of ZnO thin-film transistors is proposed by adding O-3 treatment after each growth cycle. The method reduces the shift of threshold voltage, improves the transistor's mobility, and reduces defects in the ZnO channel layer through the bilayer structure and O-3 treatment, achieving high efficiency and stability for ZnO thin-film transistors.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Multidisciplinary
Jaebaek Lee, Dong-Hwan Jeon, Dae-Kue Hwang, Kee-Jeong Yang, Jin-Kyu Kang, Shi-Joon Sung, Hyunwoong Park, Dae-Hwan Kim
Summary: This study utilized atomic layer deposition (ALD) processes to fabricate thin window layers for Cu(In-x,Ga1-x)Se-2 (CIGS) thin-film solar cells, showing superior photovoltaic performances and increased efficiency compared to traditional sputtering techniques.
Article
Materials Science, Multidisciplinary
Nipawan Suwannakham, Auttasit Tubtimtae
Summary: In this study, aluminum telluride thin films were synthesized using a systematic electrodeposition method at different applied anodic potentials (2-12 V) on conductive FTO glass substrates. The unique properties of the Al2Te3 thin films were investigated using X-ray diffractometry (XRD), field-emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), and ultraviolet-visible (UV) spectroscopy. The results show that the electrodeposited Al2Te3 films can be a promising candidate for solar absorber materials or other optoelectronic applications, with the optimum applied anodic potential condition in the range of 8-12 V.
Article
Nanoscience & Nanotechnology
Yuan Zhang, Jia-Jia Tao, Hong-Yan Chen, Hong-Liang Lu
Summary: The research focuses on the growth of hetero-epitaxial ZnO-AlN core-shell nanowires and single crystalline AlN films on non-polar ZnO substrates at a low temperature using atomic layer deposition. It was found that the AlN shells exhibit excellent single-crystal properties and there exists a specific epitaxial relationship between the ZnO core and the AlN shell during the growth process.
Article
Engineering, Electrical & Electronic
Seyed Ashkan Moghadam Ziabari, Ali Abdolahzadeh Ziabari, S. J. Mousavi
Summary: A back surface field CIGS multilayer solar cell structure with a CZTSSe layer as a second absorber layer between the BSF and CIGS layers was simulated using SCAPS 1D. By optimizing the thickness and carrier concentration of different layers, a solar cell with a power conversion efficiency of 35.1% was achieved.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2022)
Article
Optics
Waqas Farooq, Thamraa Alshahrani, Syed Asfandyar Ali Kazmi, Javed Iqbal, Hassnain Abbas Khan, Mahmood Khan, Arsalan Ahmad Raja, Atteq ur Rehman
Summary: This paper presents a novel architecture to reduce reflection losses in solar cells using the DBR technique, resulting in improved performance parameters. The structure with BSF and DBR pairs shows enhanced performance parameters compared to structures without these layers.
Article
Energy & Fuels
Fan-Wei Liu, Tzu-Min Cheng, Yen-Jung Chen, Kai-Chieh Yueh, Shin-Yi Tang, Kuangye Wang, Chia-Lung Wu, Hsu-Sheng Tsai, Yi-Jen Yu, Chih-Huang Lai, Wei-Sheng Chen, Yu-Lun Chueh
Summary: This study proposes a separation process for the effective recycling and recovery of Cu, In, and Ga from waste CIGS thin-film solar panels. By investigating the removal of Se, extraction conditions, and precipitation, a recovery rate of over 90% could be achieved for Cu, In, and Ga.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2022)
Article
Materials Science, Multidisciplinary
G. Regmi, S. Velumani
Summary: In this study, Highly resistive intrinsic zinc oxide (i-ZnO) thin films were deposited via RF magnetron sputtering with varying target power to investigate their structural, morphological, and optical properties. The thickness of i-ZnO as an intermediate layer in CuInSe2 (CISe) solar cells had a significant impact on photovoltaic performance, with 80 nm thickness being optimal for conversion efficiency. The results experimentally explored the correlation between i-ZnO thickness and photovoltaic performance.
Article
Chemistry, Multidisciplinary
Leyi Li, Zhixin Wan, Quan Wen, Zesheng Lv, Bin Xi
Summary: This paper reports the atomic layer deposition (ALD) of novel ternary ZnCoxOy films with p-type semiconducting behavior. The study optimized the deposition of ZnO and Co3O4 using commercial precursors, resulting in a spinel structured ZnCoxOy film with smooth surface, good crystallinity, and high purity. As the concentration of Co element increased, the transmittance and bandgap of the material decreased. The ZnCoxOy film was found to be more stable than its p-type analog Co3O4 film, and it exhibited good rectification behaviors and low reverse leakage when used in p-n diode fabrication.
Article
Chemistry, Multidisciplinary
A. Raval, I. A. Shaikh, Y. N. Doshi, N. M. Shastri, L. K. Saini, D. Shah
Summary: A simple drop-casting technique was used to prepare tin selenide thin films with triethanolamine as complexing agent. The synthesized films were analyzed for their surface morphology, structure, electrical conductivity, and optical properties. The results showed that the films had an orthorhombic crystal structure, good continuity, and were suitable for use as an absorber layer in solar cells.
MATERIALS TODAY CHEMISTRY
(2022)
Article
Energy & Fuels
Bowen Liu, Xinan Shi, Wei Shao, Jiaxin Gao, Chenxi Zhao, Fuyan Chen, Dongdong Shen, Bingsuo Zou, Daocheng Pan
Summary: A novel and green ionic liquid-assisted ink is developed for the fabrication of highly efficient CIGSSe solar cells by inkjet printing. Compared to the conventional vacuum-based deposition and spin-coating solution methods, inkjet printing technology can remarkably improve the material utilization of copper indium gallium sulfur selenium (CIGS) and achieve a flat and continuous deposition of CIGS thin film. The inkjet-printed CIGSSe solar cells show an encouraging power conversion efficiency of 15.22%.
Review
Energy & Fuels
Indu Sharma, Pravin S. Pawar, Rahul Kumar Yadav, Raju Nandi, Jaeyeong Heo
Summary: This review article focuses on the effect of graded absorber layers on the performance of thin-film solar cells (TFSCs), as well as the tuning of absorber layer bandgaps for achieving high performance. It provides insights into current progress and future possibilities in the field of graded TFSCs.
Article
Physics, Multidisciplinary
Saumik Dey Shovan, Samia Akhter Ringky, Afia Mubassira Islam, Saiful Islam, Mohammad Junaebur Rashid
Summary: In this study, a hybrid buffer layer (CdS & ZnSe) is placed between the absorber and the window layer in a CIGS solar cell to enhance its performance. The physical parameters of both absorber and buffer layer are optimized, and the impact of working temperature is considered. A new structure with higher conversion efficiency is proposed and compared to the reference structure.
Article
Optics
Manish Deo, R. K. Chauhan
Summary: In this paper, a high performing CIGS solar cell is designed using InP as a buffer layer instead of toxic CdS. The proposed device structure is optimized by varying thickness, defect density, and doping concentration. The behavior of the device is studied through various electrical parameters, and the performance is investigated by varying resistance, temperature, and work function. The proposed solar cell shows a maximum efficiency of 28.01% at room temperature (300 K) through simulation analysis.
Article
Chemistry, Physical
Fengqi Zhou, Feng Qin, Zao Yi, Weitang Yao, Zhimin Liu, Xianwen Wu, Pinghui Wu
Summary: The study introduces an ultra-wideband solar energy absorber composed of Ti ring and SiO2-Si3N4-Ti thin films, with absorption efficiency exceeding 90% and high absorptivity peaks. It maintains absorption efficiency above 90% at various polarization and incidence angles, showing great potential for wide-ranging applications.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2021)
Article
Energy & Fuels
Dae-Hyung Cho, Hong Seok Jo, Woo-Jung Lee, Tae-Gun Kim, Byungha Shin, Sam S. Yoon, Yong-Duck Chung
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2019)
Article
Engineering, Electrical & Electronic
Jeha Kim, Cha Ran Lee, Vinaya Kumar Arepalli, Sung-Jun Kim, Woo-Jung Lee, Yong-Duck Chung
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2020)
Article
Chemistry, Physical
Juran Kim, Jayeong Kim, Eunji Ko, Ha Kyung Park, Seokhyun Yoon, Dae-Hyung Cho, Woo-Jung Lee, Yong-Duck Chung, William Jo
APPLIED SURFACE SCIENCE
(2020)
Article
Energy & Fuels
Dae-Hyung Cho, Woo-Jung Lee, Myeong-Eon Kim, Byungha Shin, Yong-Duck Chung
PROGRESS IN PHOTOVOLTAICS
(2020)
Article
Chemistry, Physical
Woo-Jung Lee, Dae-Hyung Cho, Jung Min Bae, Myeong Eon Kim, Jaehun Park, Yong-Duck Chung
Article
Materials Science, Multidisciplinary
Young-Hee Joo, Jae-Hyung Wi, Woo-Jung Lee, Yong-Duck Chung, Dae-Hyung Cho, Saewon Kang, Doo-Seung Um, Chang-Il Kim
Article
Materials Science, Multidisciplinary
Jong Hun Yu, Dae-Hyung Cho, Woo-Jung Lee, Woo-Ju Kim, Seong Jun Kang, Yong-Duck Chung
Summary: By introducing quantum dots (QDs) with a CdSe/ZnS core-shell structure into Cu(In,Ga)Se-2 (CIGS) thin-film solar cells, the short-wavelength spectral response is enhanced, leading to an increase in short-circuit current density and efficiency.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Crystallography
Chul Kang, Gyuseok Lee, Woo-Jung Lee, Dae-Hyung Cho, Inhee Maeng, Yong-Duck Chung, Chul-Sik Kee
Summary: Ar-ion implantation increases the THz emission and carrier dynamics of CIGS films.
Article
Nanoscience & Nanotechnology
Woo-Jung Lee, Dae-Hyung Cho, Jae-Hyung Wi, Jong Hun Yu, Woo-Ju Kim, Chul Kang, Seong Jun Kang, Yong-Duck Chung
Summary: The highest efficiency of CIGS solar cells was achieved at a KF PDT process time of 50s, where the K-In-Se phase formed is beneficial for solar cell performance. Additionally, photocarrier transport is more effective at low barrier heights.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Physical
Jong Hun Yu, Woo-Jung Lee, Dae-Hyung Cho, Woo-Ju Kim, Seong Jun Kang, Yong-Duck Chung
Summary: By adjusting the S-to-O ratio, we used zinc oxysulfide (ZnO1-xSx) as a single active layer in a phototransistor. The incorporation of S atoms in the ZnO1-xSx layer improved the electrical properties and photoresponsivity, particularly in the UV and visible regions. The phototransistor with ZnO0.9S0.1 exhibited the highest performance, with high photoresponsivity and photosensitivity for 450 nm light. The increase in oxygen vacancies due to the incorporation of S atoms was identified as the mechanism behind the improvement in photoresponsivity.
APPLIED SURFACE SCIENCE
(2022)
Article
Energy & Fuels
Woo-Ju Kim, Dae-Hyung Cho, Sung-Hoon Hong, Woo-Jung Lee, Tae-Ha Hwang, Joo Yeon Kim, Yong -Duck Chung
Summary: With the increasing use of building-integrated photovoltaic technology, diffractive nanostructures are used to create colorful solar cells that blend in with their surroundings. Various colors are produced on Cu(In,Ga)Se2 (CIGS) thin-film solar cells using nanoscale imprinting and transfer lithography methods. The material types and pattern shapes of the nanostructures have an impact on the optical properties of the solar cells. SiO2 demonstrates higher short-circuit current density (JSC) and color quality compared to TiO2.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2023)
Article
Engineering, Electrical & Electronic
Woo-Jung Lee, Gyuseok Lee, Dae-Hyung Cho, Kang Chul, Nosoung Myoung, C. S. Kee, Yong-Duck Chung
Summary: Investigating the effects of H+ ion irradiation on a chalcogenide Cu(In,Ga)Se-2 (CIGS) thin film revealed a conversion from p- to n-type conductivity, induced by strong surface band bending and ultrafast behavior of photocarriers. The use of optical pump THz probe spectroscopy further showed the ultrafast photocarrier dynamics at surface and bulk defect states, indicating H+ ion irradiation pacifies Cu vacancy defects while generating new defect states.
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
(2021)
Article
Chemistry, Physical
Dae-Hyung Cho, Woo-Jung Lee, Myeong Eon Kim, Kihwan Kim, Jae Ho Yun, Yong-Duck Chung
JOURNAL OF ALLOYS AND COMPOUNDS
(2020)
Article
Chemistry, Physical
Juran Kim, Gee Yeong Kim, Thi Thu Nguyen Trang, Seokhyun Yoon, Yoon-Koo Kim, Seung-Yong Lee, Miyoung Kim, Dae-Hyung Cho, Yong-Duck Chung, Je-Ho Lee, Maeng-Je Seong, William Jo
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2020)
Article
Engineering, Electrical & Electronic
Nishi Mehak, Bindu Rani, Aadil Fayaz Wani, Shakeel Ahmad Khandy, Ajay Singh Verma, Atif Mossad Ali, M. A. Sayed, Shobhna Dhiman, Kulwinder Kaur
Summary: In this study, the electronic, structural, and thermoelectric properties of newly designed layered rare-earth metal germanide halides were investigated. The materials showed promising thermoelectric performance, making them suitable candidates for energy harvesting in thermoelectric applications.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Devidas I. Halge, Vijaykiran N. Narwade, Nabeel M. S. Kaawash, Pooja M. Khanzode, Sohel J. Shaikh, Jagdish W. Dadge, Prashant S. Alegaonkar, Rajeshkumar S. Hyam, Kashinath A. Bogle
Summary: This study presents the design and fabrication of a high-performance blue light photodetector using an n-type cadmium sulfide (CdS) thin film and a p-type polyaniline (PANI). The photodetector demonstrates exceptional performance characteristics, including high responsivity, detectivity, and sensitivity, along with rapid response time and rectification behavior. The research represents a significant advancement in the field of high-performance photodetectors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Da Hu, Jiabin Lu, Qiusheng Yan, Yingrong Luo, Ziyuan Luo
Summary: This study introduces a chemical mechanical polishing technique based on metal electrochemical corrosion for single-crystal SiC to address the environmental pollution caused by the polishing solution in chemical mechanical polishing. Wear experiments were conducted to investigate the wear properties of SiC C-surface under different grinding ball materials and solutions. The proposed mechanism of material removal in single-crystal SiC via metal electrochemical corrosion was discussed.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Lifang Mei, Long Lin, Dongbing Yan, Yu Liang, Yu Wu, Shuixuan Chen
Summary: This paper investigates the removal of CuO particles from silicon wafer surfaces using a picosecond laser. Numerical calculations and experimental research were conducted, and a thermal-stress coupled finite element model was established. The results show that as the laser energy density increases, the removal rate of CuO particles initially increases and then decreases, while the roughness of the silicon substrate decreases and then increases.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Summary: In this study, we demonstrated the low-temperature growth of a Ge layer on a Co-based Heusler alloy via Sn doping, which improved the magnetic properties and spin signal.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Xiang-Long Wei, Bao-Feng Shan, Zong-Yan Zhao
Summary: This study synthesized and characterized a CuAlO2/CuGaO2 heterostructure and evaluated its photocatalytic performance. The heterostructure exhibited superior performance compared to individual CuAlO2 and CuGaO2 photocatalysts, with increased carrier concentration, enhanced redox capabilities, superior electrochemical stability, and reduced interfacial resistance. Photocatalytic experiments demonstrated the remarkable oxidation potential and notable reduction activity of the heterostructure, outperforming CuAlO2 and CuGaO2 in degradation rates and hydrogen production rates, respectively. These findings highlight the superior performance and broad applicability of the CuAlO2/CuGaO2 heterostructure in various photocatalytic reactions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude De Jaeger, Yvon Cordier
Summary: This study investigates the AlN nucleation layer issue in GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. It is shown that using 3C-SiC as an intermediate layer can significantly decrease RF propagation losses. Measurements and analyses demonstrate that dopant diffusion into the 3C-SiC pseudo-substrate is confined beneath the interface, and a slightly conductive zone is present beneath the AlN/3C-SiC interface, explaining the low propagation losses obtained for the devices. This work highlights the importance and efficiency of the 3C-SiC intermediate layer as a pseudo-substrate.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuang Wang, Lijun Wu, Zhiqing Wang, Ziyue Qian
Summary: The geometric structure and electrical properties of zigzag and armchair DWSiNT perfect tubes with different Stone-Wales defects were simulated using the SCC-DFTB method. It was found that the atomic arrangement, stability, energy gap, and charge distribution strongly depend on the type of tube. The effects of strong and weak electric fields on the tubes were also investigated, showing different impact on stability and energy gap. These findings have implications for future experimental studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Nanda Kumar Reddy Nallabala, Sunil Singh Kushvaha, Sambasivam Sangaraju, Venkata Krishnaiah Kummara
Summary: This study focuses on the preparation and performance of MIS-type high-k dielectric oxide-based UV photodetectors. The researchers found that the Au/Ta2O5/GaN devices prepared on Ta2O5/GaN heterojunction with post-annealing exhibited improved photoresponsivity, EQE, and rise/fall times. This improvement is attributed to the optimized band configuration of the Ta2O5/GaN heterostructure and the effect of post-annealing on photogenerated charge carriers.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Jean-Francois Michaud, Marc Portail, Daniel Alquier, Dominique Certon, Isabelle Dufour
Summary: This paper reviews the use of MEMS devices without sensitive layers in gas detection applications. These devices can measure a physical property of the gas to determine its concentration, and have the advantages of generality and high detection limits.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Kanyu Yang, Chaojie Shi, Ruizhao Tian, Haoyue Deng, Jie He, Yangyang Qi, Zhengchun Yang, Jinshi Zhao, Zhen Fan, Jun Liu
Summary: This study investigates the electrical and synaptic properties of Ag/TiO2 nanorod/FTO-based RRAM devices, focusing on the impact of different seed layer thicknesses on nanorod thickness and RRAM performance. The devices show remarkable achievements in terms of endurance, self-compliance, and resistance switching ratio. The switching mechanism is attributed to space-charge-limited conduction resulting from electron trapping in oxygen vacancy traps. The devices also maintain stable synaptic properties even after undergoing multiple cycles of long-term potentiation and depression.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Karthickraj Muthuramalingam, Wei-Chih Wang
Summary: This study presents a non-destructive approach using terahertz time-domain spectroscopy (THz-TDS) to estimate the electrical properties of semi-insulating compound semiconductors. The study successfully measures the resistivity and carrier concentration of semi-insulating Silicon Carbide (SiC) and Indium Phosphide (InP) wafers using THz-TDS in transmission mode. The simplified Drude model and the Nelder-Mead algorithm are employed to estimate the electrical properties, and the results are in accordance with the manufacturer specifications. The feasibility of non-destructive mapping of the electrical properties is demonstrated, offering a promising tomographic inspection approach for online monitoring.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Pengfei Wei, Rui Tong, Xiaofeng Liu, Yao Wei, Yongan Zhang, Xu Liu, Jian Dai, Haipeng Yin, Dongming Liu
Summary: This study investigates the influence of SiNx and SiOxNy as rear-side passivation films on the performance of PERC+ cells. SiNx film is found to have better passivation performance and resistance to aluminum paste erosion, while SiOxNy film exhibits better optical performance. By designing multi-layer SiNx/SiOxNy/SiNx stacks, the cells' efficiency and bifaciality are significantly improved.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Article
Engineering, Electrical & Electronic
Shuangting Ruan, Xiaolan Li, Wen Cui, Zhihui Zhang, Zhihui Xu, Huanqi Cao, Shougen Yin, Shishuai Sun
Summary: Integrating photosensitive electrode materials can effectively improve the low temperature tolerance and enhance energy density and power density. The surface morphology reconstruction technique can increase the active surface area and improve electrolyte contact, leading to higher specific capacity. Additionally, the electrodes demonstrate excellent photoelectric and photothermal conversion abilities, allowing the supercapacitor to maintain high energy density even at low temperatures.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
Review
Engineering, Electrical & Electronic
Ashmalina Rahman, James Robert Jennings, Mohammad Mansoob Khan
Summary: This review provides a comprehensive overview of the synthesis and applications of nanostructured CuInS2 in photocatalytic applications. Various strategies, including the introduction of dopants, surface decoration, and heterojunction formation, have been summarized to improve the photocatalytic performance of CuInS2. However, scientific challenges such as the high carrier recombination rate limit the broad application of CuInS2.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2024)
