High-Speed Femto-Joule per Bit Silicon-Conductive Oxide Nanocavity Modulator

By combining the large Purcell effect of photonic crystal nanocavity and the strong plasma dispersion effect of the transparent conductive oxides, ultra-compact silicon modulators with heterogeneously integrated indium-tin-oxide (ITO) can potentially achieve unprecedented energy efficiency. In this article, we report the first high-speed silicon nanocavity modulator driven by an ITO gate, achieving 1.94 GHz bandwidth. On-off-key modulation is measured up to 3 Gb/s with only 2 V voltage swing and 18.3 fJ/bit energy efficiency. In addition, we perform in-depth analysis of the energy efficiency and high frequency simulation of the nanocavity modulator, revealing the critical role played by the semiconductor conduction path and the overlapping factor between the accumulated free carriers and the cavity resonant mode. Based on our analysis, we propose a strategy to further improve the modulation bandwidth to 23.5 GHz by node-matched doping and reduce the energy consumption to the range of hundreds of atto-joule per bit.

Automated summary

The research introduces the first high-speed silicon nanocavity modulator, driven by an ITO gate, achieving a bandwidth of 1.94 GHz and demonstrating on-off-key modulation with an energy efficiency of 18.3 fJ per bit. Through analysis of energy efficiency and high frequency simulation, the study reveals the critical roles played by the semiconductor conduction path and the overlapping factor between accumulated free carriers and cavity resonant mode.