Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu₂O Thin-Film Transistors

Published 2020 View Full Article

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Title
Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu₂O Thin-Film Transistors
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 12, Pages 5557-5563
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-11-11
DOI
10.1109/ted.2020.3033832

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