Journal
SOLAR RRL
Volume 4, Issue 12, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202000435
Keywords
back junction; polycrystalline passivating contacts; p-type wafers
Funding
- German Federal Ministry for Economic Affairs and Energy (BMWi) [03EE1012A, 0324171C]
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The fabrication of a silicon solar cell on 6 in. pseudo-square p-type Czochralski grown silicon wafers featuring poly-Si-based passivating contacts for electrons at the cell rear side and screen-printed aluminum fingers at the front side is demonstrated. The undiffused front surface is passivated with an Al2O3/SiNx stack, and the rear surface is covered with a thin oxide/n(+)-poly-Si/Al2O3/SiNx layer system, contacted by screen-printed silver fingers. A loss analysis shows that the recombination losses at the metal contacts on both cell sides dominate the total energy losses. A voltage of 700 mV as the highest open-circuit voltage from a batch of seven cells is achieved, and the best cell efficiency is 22.3%, independently confirmed.
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