Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory

Published 2020 View Full Article

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Title
Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory
Authors
Keywords
Bilayer HfO, 2, /ZrO, 2, structure, Thermal conductivity, Gibbs free energy, Resistive switching, Schottky emission
Journal
Results in Physics
Volume 18, Issue -, Pages 103275
Publisher
Elsevier BV
Online
2020-08-01
DOI
10.1016/j.rinp.2020.103275

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