Journal
OPTICA
Volume 7, Issue 10, Pages 1385-1390Publisher
OPTICAL SOC AMER
DOI: 10.1364/OPTICA.403178
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Funding
- National Science Foundation [ECCS-1933556]
- H2020 Marie Sklodowska-Curie Actions [751016]
- Air Force Office of Scientific Research [FA9550-16-10391]
- Defense Advanced Research Projects Agency [HR0011-15-C-0056]
- MITRECorporation
- Marie Curie Actions (MSCA) [751016] Funding Source: Marie Curie Actions (MSCA)
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Reliable operation of photonic integrated circuits at cryogenic temperatures would enable new capabilities for emerging computing platforms, such as quantum technologies and low-power cryogenic computing. The silicon-on-insulator platform is a highly promising approach to developing large-scale photonic integrated circuits due to its exceptional manufacturability, CMOS compatibility, and high component density. Fast, efficient, and low-loss modulation at cryogenic temperatures in silicon, however, remains an outstanding challenge, particularly without the addition of exotic nonlinear optical materials. In this paper, we demonstrate DC-Kerr-effect-based modulation at a temperature of 5 K at GHz speeds, in a silicon photonic device fabricated exclusively within a CMOS-compatible process. This work opens up a path for the integration of DC Kerr modulators in large-scale photonic integrated circuits for emerging cryogenic classical and quantum computing applications. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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