Journal
NANOPHOTONICS
Volume 10, Issue 1, Pages 99-104Publisher
WALTER DE GRUYTER GMBH
DOI: 10.1515/nanoph-2020-0363
Keywords
2D materials; cryogenic; graphene; modulator; ring resonator; silicon photonics
Categories
Funding
- Office of Naval Research [N00014-16-1-2219]
- Defense Advanced Research Projects Agency [HR001110720034]
- National Science Foundation [UTA16-000936]
- Air Force Office of Scientific Research [FA9550-18-1-0379]
- Air Force Materiel Command [FA8650-18-1-7815]
- National Aeronautics and Space Administration [NNX16AD16G]
- Hypres, Inc. [CU15-3759]
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Graphene-based electro-optic modulators demonstrate higher bandwidth and performance at low temperatures, offering a solution to the reduced bandwidth issue of existing integrated modulators in cryogenic applications.
High-performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative because graphene's intrinsic carrier mobility increases at low temperature. Here, we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room temperature bandwidth of 12.6 GHz. The bandwidth of the modulator is limited only by high contact resistance, and its intrinsic RC-limited bandwidth is 200 GHz at 4.9 K.
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