Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Published 2020 View Full Article

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Title
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
Authors
Keywords
-
Journal
Materials
Volume 13, Issue 21, Pages 4740
Publisher
MDPI AG
Online
2020-10-23
DOI
10.3390/ma13214740

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