Journal
MATERIALS
Volume 13, Issue 17, Pages -Publisher
MDPI
DOI: 10.3390/ma13173671
Keywords
Cr2C; first-principle study; MXene; memristor
Categories
Funding
- Shanghai Aeronautical Technological Innovation Funding [SAST2017-106, SAST2019-029]
- National Natural Science Foundation of China [61964012, 61663030]
Ask authors/readers for more resources
The electronic structure and the corresponding electrical conductive behavior of the Cu/Cr2C/TiN stack were assessed according to a newly developed first-principle model based on density functional theory. Using an additional Cr2C layer provides the metal-like characteristic of the Cu/Cr2C/TiN stack with much larger electrical conduction coefficients (i.e., mobility, diffusivity, and electrical conductivity) than the conventional Ag/Ti3C2/Pt stack due to the lower activation energy. This device is therefore capable of offering faster switching speeds, lower programming voltage, and better stability and durability than the memristor device with conventional Ti(3)C(2)MXene.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available