Well-behaved Ge n+/p shallow junction achieved by plasma immersion ion implantation

Title
Well-behaved Ge n+/p shallow junction achieved by plasma immersion ion implantation
Authors
Keywords
Germanium, Ion implantation, Junction, Plasma immersion ion implantation
Journal
VACUUM
Volume 180, Issue -, Pages 109528
Publisher
Elsevier BV
Online
2020-06-23
DOI
10.1016/j.vacuum.2020.109528

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