Article
Biochemistry & Molecular Biology
Shicong Jiang, Wan-Yu Wu, Fangbin Ren, Chia-Hsun Hsu, Xiaoying Zhang, Peng Gao, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, Wenzhang Zhu
Summary: The application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. However, to deposit high-quality GaN material as a foundation is essential. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of ALD process with plasma utilization and has been used to deposit thin films with various requirements. In this study, NH3-containing plasma was used to eliminate the residual oxygen during the growth of GaN films, which significantly improved the quality of the films. The plasma power controlled NH2, NH, and H radicals showed strong influence on the oxygen content, growth rate, crystallinity, and surface roughness of the GaN films.
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
(2022)
Article
Chemistry, Physical
Xiao-Ying Zhang, Duan-Chen Peng, Jing Han, Fang-Bin Ren, Shi-Cong Jiang, Ming-Chun Tseng, Yu-Jiao Ruan, Juan Zuo, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, Wen-Zhang Zhu
Summary: Aluminum nitride (AlN) thin films with considerable properties were prepared using remote plasma atomic layer deposition (RP-ALD). The properties of AlN films with different growth temperatures were studied, and the characteristics of AlN/GaN and AlN/Al2O3 interfaces were analyzed on sapphire substrates. The experimental results showed that crystal AlN films with a hexagonal wurtzite structure were obtained at 250 degrees C. X-ray photoelectron spectroscopy confirmed the presence of Al-O, Al-O-N complexes, and Al-Al metallic aluminum bonds in the AlN films. High-resolution transmission electron microscopy revealed sharp interfaces of AlN/Al2O3 and AlN/GaN. Photoluminescence measurements confirmed that the AlN buffer layer enhances the quality of GaN grown on sapphire substrates. The high-quality AlN/GaN layers prepared by RP-ALD provide a promising pathway for high-quality GaN-based devices.
SURFACES AND INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Yue Yang, Xiao-Ying Zhang, Chen Wang, Fang-Bin Ren, Run-Feng Zhu, Chia-Hsun Hsu, Wan-Yu Wu, Dong-Sing Wuu, Peng Gao, Yu-Jiao Ruan, Shui-Yang Lien, Wen-Zhang Zhu
Summary: Amorphous gallium oxide thin films were grown using plasma-enhanced atomic layer deposition. The films exhibited decreasing band gap energy and increased density as the temperature increased. The higher substrate temperature also resulted in increased surface roughness. Films grown at temperatures below 200 degrees C were amorphous, while the film grown at 250 degrees C showed slight crystallinity.
Article
Chemistry, Physical
T. Roch, M. Gregor, S. Volkov, M. Caplovicova, L. Satrapinskyy, A. Plecenik
Summary: This study examined the impact of different substrates on the structure and orientation of niobium nitride thin films, revealing that films on C-Al2O3 substrate exhibited the best superconducting properties.
APPLIED SURFACE SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Leonid Yu. Beliaev, Evgeniy Shkondin, Andrei V. Lavrinenko, Osamu Takayama
Summary: We conducted a comparative study on the optical properties of 50 nm-thick titanium nitride (TiN) films deposited by different methods and process temperatures, and found that films deposited by pulsed-DC sputtering at 600 degrees C showed the best plasmonic response. These results suggest a direct relationship between the stoichiometry, structural quality, and oxygen incorporation in TiN films and their plasmonic properties.
Article
Chemistry, Multidisciplinary
Xiao-Ying Zhang, Yue Yang, Zhi-Xuan Zhang, Xin-Peng Geng, Chia-Hsun Hsu, Wan-Yu Wu, Shui-Yang Lien, Wen-Zhang Zhu
Summary: In this study, SiO2 films were deposited by remote plasma atomic layer deposition using different oxygen plasma powers. The results showed that the oxygen plasma power had a significant impact on the growth rate and surface properties of the SiO2 films. Additionally, increasing post-annealing temperature resulted in denser SiO2 films with higher refractive index and lower etch rate.
Article
Chemistry, Physical
Ales Omerzu, Robert Peter, Daria Jardas, Iztok Turel, Kresimir Salamon, Matejka Podlogar, Damjan Vengust, Ivana Jelovica Badovinac, Ivna Kavre Piltaver, Mladen Petravic
Summary: The study demonstrated a significant enhancement in the photocatalytic activity of thin ZnO films grown by PE-ALD method compared to those grown by the thermal ALD method. Various structural and optical experimental techniques were employed to analyze the physical origin of this difference.
SURFACES AND INTERFACES
(2021)
Article
Physics, Applied
M. Jullien, C. S. Chang, L. Badie, S. Robert, M. Hehn, D. Lacour, F. Montaigne
Summary: Cobalt thin films were grown using plasma-enhanced atomic layer deposition, with investigations into their electrical and magnetic properties as a function of growth temperature. It was found that the magnetic and resistivity properties of the films varied with growth temperature, with an optimal growth temperature of 340 degrees C. The study suggests that atomic layer deposition may be a viable alternative for depositing ferromagnetic layers in spintronics applications.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Physics, Applied
M. Shibalov, A. M. Mumlyakov, I. Trofimov, E. R. Timofeeva, A. P. Sirotina, E. A. Pershina, A. M. Tagachenkov, Y. Anufriev, E. Zenova, N. Porokhov, M. A. Tarkhov
Summary: This study utilized plasma-enhanced atomic layer deposition to produce ultrathin superconductive niobium nitride films with a record resistivity of 147 microohm·cm. Experimental findings revealed that the resistivity of the films influences the critical current density.
SUPERCONDUCTOR SCIENCE & TECHNOLOGY
(2021)
Article
Materials Science, Ceramics
Jeong Woo Shin, Jaehyeong Lee, Keunhoi Kim, Chansong Kwon, Young Bin Park, Heesung Park, Kwanlae Kim, Hyo Suk Ahn, Dongha Shim, Jihwan An
Summary: The study investigated the effect of nitrogen plasma parameters on TiN films processed by PEALD, revealing that highly dense and crystallized TiN films with improved adhesion can be deposited at higher nitrogen plasma power and longer plasma exposure time during the process.
CERAMICS INTERNATIONAL
(2022)
Article
Nanoscience & Nanotechnology
Yachen Xu, Huimin Chen, Haiyang Xu, Minyu Chen, Pengchao Zhou, Shuzhe Li, Ge Zhang, Wei Shi, Xuyong Yang, Xingwei Ding, Bin Wei
Summary: In this study, a composite structure composed of Al2O3/HfO2 with different Al2O3/HfO2 cycles prepared by atomic layer deposition (ALD) was designed to obtain high-quality ultrathin (1-12 nm) dielectric films. The film exhibited a layer growth mode and physically formed at 3 nm, with the electrically stable film thickness being 10 nm. The ALD-prepared composite strategy provides a simple and practical way to obtain high-quality dielectric films.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Multidisciplinary
Ramasis Goswami, Syed Qadri, Neeraj Nepal, Charles Eddy
Summary: In this study, ultra-thin AlN films were grown on different substrates using atomic layer epitaxy, showing that the substrate, particularly the strain, plays a crucial role in determining the crystal structure of AlN films. The strain level varied significantly depending on the substrate, impacting the orientation relation and crystal quality of AlN films.
Article
Biochemistry & Molecular Biology
Fang-Bin Ren, Shi-Cong Jiang, Chia-Hsun Hsu, Xiao-Ying Zhang, Peng Gao, Wan-Yu Wu, Yi-Jui Chiu, Shui-Yang Lien, Wen-Zhang Zhu
Summary: Gallium nitride (GaN) films were grown using plasma-enhanced atomic layer deposition (PEALD) method, and the effect of substrate temperature on their growth mechanism and properties was systematically studied. The experimental results showed that self-limiting surface chemical reactions occurred in the substrate temperature range of 250-350 degrees C. The optimum substrate temperature with the highest amount of Ga-N bonds was found to be 350 degrees C.
Article
Chemistry, Multidisciplinary
Liangge Xu, Jinye Yang, Kun Li, Lei Yang, Jiaqi Zhu
Summary: This study investigates the effect of post-deposition annealing process on the microstructure and optoelectronic properties of indium-hydroxide-doped thin films. The results show that the annealed films have high carrier mobility and transmittance, and exhibit excellent shielding performance against radar electromagnetic waves. This provides a guideline for fabricating lightweight, thin, and multi-functional shielding infrared transparent materials.
Article
Chemistry, Physical
Mohd Zahid Ansari, Petr Janicek, Dip K. Nandi, Karel Palka, Stanislav Slang, Deok Hyun Kim, Taehoon Cheon, Soo-Hyun Kim
Summary: This article investigates the effects of post-thermal annealing treatment on the properties of tin nitride thin films. With increasing annealing temperatures, changes in the film structure and crystallinity occur, along with the release of nitrogen leading to variations in film properties. Changes in optoelectronic properties are closely related to alterations in crystallinity and stoichiometry.
APPLIED SURFACE SCIENCE
(2021)
Article
Crystallography
S. Nishizawa, F. Mercier
JOURNAL OF CRYSTAL GROWTH
(2019)
Article
Materials Science, Multidisciplinary
L. Charpentier, D. Chen, J. Colas, F. Mercier, M. Pons, D. Pique, G. Giusti, J. L. Sans, M. Balat-Pichelin
MRS COMMUNICATIONS
(2019)
Article
Materials Science, Multidisciplinary
S. Lay, F. Mercier, R. Boichot, G. Giusti, M. Pons, E. Blanquet
JOURNAL OF MATERIALS SCIENCE
(2020)
Article
Materials Science, Coatings & Films
D. Chen, J. Colas, F. Mercier, R. Boichot, L. Charpentier, C. Escape, M. Balat-Pichelin, M. Pons
SURFACE & COATINGS TECHNOLOGY
(2019)
Article
Materials Science, Ceramics
Fatma Trabelsi, Frederic Mercier, Elisabeth Blanquet, Alexandre Crisci, Rached Salhi
CERAMICS INTERNATIONAL
(2020)
Article
Materials Science, Coatings & Films
Danying Chen, Alexandre Crisci, Raphael Boichot, Johann Colas, Ludovic Charpentier, Marianne Balat-Pichelin, Michel Pons, Frederic Mercier
SURFACE & COATINGS TECHNOLOGY
(2020)
Article
Materials Science, Multidisciplinary
J. Colas, L. Charpentier, D. Chen, E. Beche, J. Esvan, D. De Sousa Meneses, F. Mercier, M. Pons, M. Balat-Pichelin
Summary: The oxidation resistance of intermetallics in the Mo-Si-Al system was tested, showing superior oxidation maximum temperature and creep resistance at high temperatures. Even after long-term oxidation and cycles in a solar furnace, the normal spectral emissivity of the intermetallics was not degraded.
Article
Materials Science, Coatings & Films
A. Moll, J-J Blandin, R. Dendievel, E. Gicquel, M. Pons, C. Jimenez, E. Blanquet, F. Mercier
Summary: The study introduces an innovative process to develop 3D Ti-6Al-4V structures covered with AlN coating for protection against oxidation. By combining CVD and ALD deposition techniques, both AlN underlayer and top layer are successfully deposited to limit the formation of brittle titanium nitride phases.
SURFACE & COATINGS TECHNOLOGY
(2021)
Article
Materials Science, Multidisciplinary
F. Volpi, C. Boujrouf, M. Rusinowicz, S. Comby-Dassonneville, F. Mercier, R. Boichot, M. Chubarov, R. Coq Germanicus, F. Charlot, M. Braccini, G. Parry, D. Pellerin, M. Verdier
Summary: This paper reports the development and application of an original instrument based on a nanoindenter coupled with fine electrical measurements and integrated in-situ a Scanning Electron Microscope (SEM), illustrating its performance and capabilities through two case studies. The instrument can monitor the electrical and mechanical properties of micrometer-scale piezoelectric structures and stacked structures, demonstrating high sensitivity monitoring and analysis of micro-scale structures.
Article
Optics
Fatma Trabelsi, Frederic Mercier, Elisabeth Blanquet, Alexandre Crisci, Raphael Boichot, Danying Chen, Rached Salhi
Summary: This study investigates the modification of upconversion luminescence in codoped nanoparticles based thin films with the addition of an ALD-Al2O3 coating. The results show that the coating improves the luminescence properties of the thin films, with the thin coating ensuring stability and the thick coating enhancing green emission while reducing red emission. These findings have promising applications in the field of photovoltaics.
JOURNAL OF LUMINESCENCE
(2022)
Article
Chemistry, Multidisciplinary
Juan Su, Raphael Boichot, Elisabeth Blanquet, Frederic Mercier, Michel Pons