Journal
OPTICS EXPRESS
Volume 28, Issue 18, Pages 26324-26335Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.400380
Keywords
-
Categories
Funding
- U.S. Department of Energy [DE-SC0016925]
- Office of Naval Research [N000141912052]
- U.S. Department of Energy (DOE) [DE-SC0016925] Funding Source: U.S. Department of Energy (DOE)
- U.S. Department of Defense (DOD) [N000141912052] Funding Source: U.S. Department of Defense (DOD)
Ask authors/readers for more resources
We present a telecommunication-compatible photoconductive terahertz detector realized without using any short-carrier-lifetime photoconductor. By utilizing plasmonic contact electrodes on a thin layer of high-mobility photoconductor, the presented detector offers a short transit time for the majority of the photocarriers in the absence of a short-carrier-lifetime photoconductor. Consequently, high-sensitivity terahertz detection is achieved with a record-high signal-to-noise ratio of 122 dB over a 3.6 THz bandwidth under an optical probe power of 10 mW. To achieve such a high sensitivity, the device geometry is chosen to maintain a high resistance and low Johnson Nyquist noise. This design approach can be widely applied for terahertz detection using various semiconductors and optical wavelengths, without being limited by the availability of short-carrier-lifetime photoconductors. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available