Journal
NANOTECHNOLOGY
Volume 31, Issue 49, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6528/abb2bf
Keywords
memtransistor; HfO(2)ferroelectricity; graphene
Funding
- UEFISCDI [PN-III-P4-ID-PCCF-2016-0033]
- Romanian Ministry of Research and Innovation [21 N/08.02.2019, PN19-03]
- MICRO-NANO-SIS PLUS, 2019-2022a, UEFISCDI [PN-III-P4-ID-PCCF-2016-0033]
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In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO2/Ge-HfO2/HfO(2)three-layer structure. This kind of transistor has a switching ratio of 10(3)between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene. The transistor acts as a three-terminal memristor, termed a memtransistor, with applications in neuromorphic computation.
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