Journal
NANO LETTERS
Volume 20, Issue 10, Pages 7469-7475Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c02951
Keywords
native oxide; high-k; oxygen plasma; Bi2O2Se; 2D materials; transistors
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Funding
- National Natural Science Foundation of China [21733001, 21525310, 51672007]
- National Basic Research Program of China [2016YFA0200101]
- United States Department of Energy (DOE), Office of Science, Basic Energy Sciences [DE-SC0019025]
- U.S. Department of Energy (DOE) [DE-SC0019025] Funding Source: U.S. Department of Energy (DOE)
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The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low- power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1 nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here, we report a facile approach to synthesize a uniform high-k (epsilon(r) similar to 22) amorphous native oxide Bi2SeOx on the high-mobility 2D semiconducting Bi2O2Se using O-2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of similar to 0.9 nm, while the original properties of underlying 2D Bi2O2Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi2O2Se is achieved to fabricate discrete electronic components. This facile integration of a high-mobility 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.
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