Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector
Structural, optical and photoresponse characteristics of metal-insulator-semiconductor (MIS) type Au/Ni/CeO2/GaN Schottky barrier ultraviolet photodetector
Authors
Keywords
Ultraviolet photodetectors, Metal-insulator-semiconductor structure, CeO, 2, Non-contact atomic force microscopy, Responsivity and transient measurements
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