Journal
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
Volume 131, Issue 1, Pages 160-176Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063776120070109
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- Russian Science Foundation [16-19-10233]
- Russian Science Foundation [19-19-13030] Funding Source: Russian Science Foundation
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This review is devoted to an analysis of the electrical resistance, the magnetoresistance, and the anomalous Hall effect in magnetic ferromagnetic metal-insulator nanocomposites at a metal content near the percolation threshold and the memristive properties of the capacitor structures based on these nanocomposites. A high content (up to 10(22)cm(-3)) of dispersed atoms in intergranular gaps leads to a logarithmic temperature dependence of the electrical resistance, a positive contribution to the magnetoresistance, the appearance of tunneling anomalous Hall effect, and a multifilament mechanism of resistive switching (which causes an adaptive character of memristor nanocomposites with dispersed atoms).
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