Resistive Switching of Memristors Based on (Co40Fe40B20)x(LiNbO3)100 -x Nanocomposite with a LiNbO3 Interlayer: Plasticity and Time Characteristics

The resistive switching (RS) of metal/nanocomposite/metal (M/NC/M) memristive structures based on the (Co40Fe40B20)(x)(LiNbO3)(100 - x)nanocomposite with a ferromagnetic alloy content x approximate to 8-20 at % is studied. The structures were synthesized by ion beam sputtering with an increased oxygen content (approximate to 2 x 10(-5)Torr) at the initial stage of NC growth, as a result of which a thin (15-18 nm) LiNbO(3)layer appears at the bottom electrode. It is found that the structures have multilevel character of RS (at least four levels) with the retention time of the emerging resistive states of more than 10(4)s and demonstrate the possibility of the resistive states change according to biosimilar rules such as spike-timing-dependent plasticity (STDP). Unusual kinetics of RS to the low-resistance state was found: RS occurs with a delay of about 70 mu s; the RS time in this case reaches similar to 5 ns, and the energy consumption for switching is similar to 1 nJ.