InSbNBi/InSb heterostructures for long wavelength infrared photodetector applications: A 16 band k · p study

Growth of dilute quaternary alloy InPNBi and its′ characterization

(2020) Subhasis Das et al.   JOURNAL OF CRYSTAL GROWTH

Electronic properties and band offsets in InP(1−x−y)BixNy

(2019) Kailin Wang et al.   MODERN PHYSICS LETTERS B

Type-II superlattice photodetectors versus HgCdTe photodiodes

(2019) A. Rogalski et al.   PROGRESS IN QUANTUM ELECTRONICS

Quantum spin Hall effect and topological phase transition in InN x Bi y Sb1−x−y /InSb quantum wells

(2017) Zhigang Song et al.   NEW JOURNAL OF PHYSICS

Calculation of band structure and optical gain of type-II GaSbBi/GaAs quantum wells using 14-band k·p Hamiltonian

(2017) Indranil Mal et al.   SUPERLATTICES AND MICROSTRUCTURES

Effect of Sb and N resonant states on the band structure and carrier effective masses of GaAs 1-x-y N x Sb y alloys and GaAs 1-x-y N x Sb y /GaAs quantum wells calculated using k·p Hamiltonian

(2017) Indranil Mal et al.   SUPERLATTICES AND MICROSTRUCTURES

Band gap reduction in InNxSb1-x alloys: Optical absorption, k · P modeling, and density functional theory

(2016) W. M. Linhart et al.   APPLIED PHYSICS LETTERS

Calculation of Valence Band Structure and Band Dispersion in Indium containing III–V Bismides by k ⋅ p method

(2016) D.P. Samajdar et al.   COMPUTATIONAL MATERIALS SCIENCE

Influence of Bi and N related impurity states on the band structure and band offsets of GaSbBiN alloys

(2016) D.P. Samajdar et al.   CURRENT APPLIED PHYSICS

Theoretical investigation of GaAsNBi/GaAs materials for optoelectronic applications

(2015) A. Aissat et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Bi-induced band gap reduction in epitaxial InSbBi alloys

(2014) M. K. Rajpalke et al.   APPLIED PHYSICS LETTERS

Valence Band Structure ofInAs1-xBixandInSb1-xBixAlloy Semiconductors Calculated Using Valence Band Anticrossing Model

(2014) D. P. Samajdar et al.   TheScientificWorldJOURNAL

Electronic band structure calculation of GaNAsBi alloys and effective mass study

(2013) M.M. Habchi et al.   INFRARED PHYSICS & TECHNOLOGY

Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

(2013) S. J. Sweeney et al.   JOURNAL OF APPLIED PHYSICS

Progress in Infrared Photodetectors Since 2000

(2013) Chandler Downs et al.   SENSORS

Strained-Layer Quantum-Well Lasers

(2011) Alfred R. Adams   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

InSbN based p-n junctions for infrared photodetection

(2010) X.Z. Chen et al.   ELECTRONICS LETTERS

InSbN alloys prepared by two-step ion implantation for infrared photodetection

(2008) D. H. Zhang et al.   APPLIED PHYSICS LETTERS

Assessment of electronic properties of InNxSb1−x for long-wavelength infrared detector applications

(2008) L. Bhusal et al.   APPLIED SURFACE SCIENCE