Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 834, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.155036
Keywords
Ga2O3 thin films; Pulsed laser deposition; Sc-alloying; Solar-blind photodetectors
Categories
Funding
- National Key RAMP
- D Program of China [2019YFB1503500]
- National Natural Science Foundation of China [51572073, 11574074, 11774082, 11874144, 11975093]
- Natural Science Foundation of Hubei Province [2018CFB700, 2019CFA006]
- Program for Science and Technology Innovation Team in Colleges of Hubei Province [T201901]
- Wuhan Application Foundation Frontier Project [2018010401011287, 2018010401011268]
- Overseas Expertise Introduction Center for Discipline Innovation [D18025]
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Although beta-Ga2O3 is considered an excellent candidate for solar-blind photodetectors (PDs) owing to its direct bandgap (4.9 eV) and high stability, the cut-off wavelength often oversteps the DUV region, reducing the rejection ratio of the PD. Moreover, oxygen vacancies, which always appear in beta-Ga2O3 films, act as trap centers hindering carrier recombination and significantly lowering response speed. To disentangle these issues, we propose in this work to modify beta-Ga2O3 by incorporating Sc to form ternary (ScGa)(2)O-3 alloys. Thanks to the wider bandgap of Sc2O3 (-5.7 eV) than Ga2O3 and stronger Sc-O bonding than Ga-O, the (ScGa)(2)O-3 alloy films exhibit a wider bandgap (5.17 eV) with fewer oxygen vacancies compared with pure-Ga2O3, as expected, which eventually lead to an ultra-low dark current (0.08 pA at 10 V) and faster response times (tau(rise): 41/149 ms; tau(decay): 22/153 ms) of the alloy film-based PDs. Furthermore, the peak and cut-off response wavelengths of the (ScGa)(2)O-3 PD are blue shifted relative to the pure Ga2O3 PD, resulting in a higher rejection ratio (>500 vs -317). The Sc-alloying strategy, taking advantage of wider bandgap of Sc2O3 and stronger Sc-O bonding to widen the bandgap while reducing the intrinsic carriers and oxygen vacancies in the (ScGa)(2)O-3 alloy, is expected to be generally applicable to the design of other wide-bandgap oxide alloys for developing high-performance UV photodetectors with a low dark current and high response speed. (C) 2020 Elsevier B.V. All rights reserved.
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