Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 32, Issue 17, Pages 1073-1076Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2020.3012568
Keywords
Laser mode locking; Absorption; Optical pulses; Current measurement; Quantum dot lasers; Optical device fabrication; Optical imaging; Mode-locked laser diode; monolithic integration; InP quantum dots
Funding
- U.K. Engineering Physical Sciences Research Council (EPSRC) [EP/P006973/1, EP/P030556/1]
- European Research Council (ERC) through the European Union [640537]
- European Research Council (ERC) [640537] Funding Source: European Research Council (ERC)
- EPSRC [EP/P006973/1, EP/P030556/1] Funding Source: UKRI
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This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.
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