Frequency doubler based on a single MoTe2/MoS2 anti-ambipolar heterostructure

A 177–183 GHz High-Power GaN-Based Frequency Doubler With Over 200 mW Output Power

(2020) Shixiong Liang et al.   IEEE ELECTRON DEVICE LETTERS

The Opposite Anisotropic Piezoresistive Effect of ReS2

(2019) Chunhua An et al.   ACS Nano

Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors

(2019) Enxiu Wu et al.   ACS Nano

Multifunctional anti-ambipolar p-n junction based on MoTe2/MoS2 heterostructure

(2019) Ruixue Hu et al.   APPLIED PHYSICS LETTERS

A Wideband SiGe BiCMOS Frequency Doubler With 6.5-dBm Peak Output Power for Millimeter-Wave Signal Sources

(2018) Kefei Wu et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

A $K$ -Band Frequency Doubler With 35-dB Fundamental Rejection Based on Novel Transformer Balun in 0.13- $\mu \text{m}$ SiGe Technology

(2016) Sudipta Chakraborty et al.   IEEE ELECTRON DEVICE LETTERS

2D materials and van der Waals heterostructures

(2016) K. S. Novoselov et al.   SCIENCE

Raman scattering of few-layers MoTe2

(2016) M Grzeszczyk et al.   2D Materials

Mechanical and Electrical Anisotropy of Few-Layer Black Phosphorus

(2015) Jin Tao et al.   ACS Nano

The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces

(2014) Cheng Gong et al.   NANO LETTERS

Large-Area, Low-Voltage, Antiambipolar Heterojunctions from Solution-Processed Semiconductors

(2014) Deep Jariwala et al.   NANO LETTERS

Van der Waals heterostructures

(2013) A. K. Geim et al.   NATURE

From Bulk to Monolayer MoS2: Evolution of Raman Scattering

(2012) Hong Li et al.   ADVANCED FUNCTIONAL MATERIALS

Graphene Electronics for RF Applications

(2012) Han Wang et al.   IEEE MICROWAVE MAGAZINE

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Triple-Mode Single-Transistor Graphene Amplifier and Its Applications

(2010) Xuebei Yang et al.   ACS Nano