Building Functional Memories and Logic Circuits with 2D Boron Nitride

The fast development of synthesis routes and preparation technology of 2D materials has motivated a rapid growth in the micro- and nanoelectronic memory devices, which gives rise to the breakthroughs in the semiconductor research area. Hexagon boron nitride (h-BN) with excellent chemical, mechanical, and optical properties has been proven to have potential in overcoming the scaling limit to nanometer, and even sub-nanometer lengths to replace the use of thick and stiff blocking dielectrics in two-terminal or three-terminal devices. The use of atomically thin h-BN or h-BN van der Waals heterostructures (vdWhs) can improve the reliability, capability, and functionality of memory devices. This is an encouraging strategy toward high-density on-chip integrated circuits, which has recently earned considerable interest. While the research in h-BN material properties and characterization is comprehensively verified, specified mechanisms of resistive switching have not been analyzed in-depth. Moreover, recent concern about novel structure design and expanding applications in electronics, optoelectronics, and spintronics has arisen. In this review, recent progress in h-BN memories with volatile or nonvolatile properties is presented, expanding the memories to functional applications, and further challenges of the development of h-BN-based memories and logic circuits are discussed.

Automated summary

The rapid development of synthesis routes and preparation technology of 2D materials has driven the growth of micro- and nanoelectronic memory devices, especially with the potential of hexagon boron nitride (h-BN) to improve performance as a replacement for traditional blocking dielectrics. While extensive research has been conducted on h-BN properties and van der Waals heterostructures, more in-depth analysis of resistive switching mechanisms is needed.