WSe2 Homojunction p–n Diode Formed by Photoinduced Activation of Mid-Gap Defect States in Boron Nitride

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Title
WSe2 Homojunction p–n Diode Formed by Photoinduced Activation of Mid-Gap Defect States in Boron Nitride
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 12, Issue 37, Pages 42007-42015
Publisher
American Chemical Society (ACS)
Online
2020-08-20
DOI
10.1021/acsami.0c12129

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