Current-Induced Thermal Tunneling Electroluminescence in a Single Highly Compensated Semiconductor Microrod

Here we demonstrate a novel and robust mechanism, termed as current-induced Joule heating activated thermal tunneling excitation, to achieve electroluminescence (EL) by the hot electron-hole-pair recombination in a single highly compensated semiconductor microrod. The radiative luminescence is electrically excited under ambient conditions. The current-induced Joule heating reduces the thermal tunneling excitation threshold of voltage down to 8 V and increases the EL efficiency similar to 4.4-fold at 723 K. We interpret this novel phenomenon by a thermal tunneling excitation model corrected by electric-induced Joule heating effect. The mechanism is confirmed via theoretical calculation and experimental demonstration, for the first time. The color-tunable EL emission is also achieved by regulation of donor concentration. This work opens up new opportunities for design of novel multi-color light-emitting devices by homogeneous defect-engineered semiconductors in future.