4.6 Article

Facile Synthesis of Highly Conductive Vanadium-Doped NiO Film for Transparent Conductive Oxide

Journal

APPLIED SCIENCES-BASEL
Volume 10, Issue 16, Pages -

Publisher

MDPI
DOI: 10.3390/app10165415

Keywords

vanadium doping; size tuning; bandgap; transparent conductive oxide; electrical conductivity

Funding

  1. National Research Foundation of Korea (NRF) [2018 R1A4A102552813]
  2. Korea Basic Science Institute (National research Facilities and Equipment Center) - Ministry of Education [2020R1A6C101A204]
  3. National Research Foundation of Korea [2020R1A6C101A204] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Metal-oxide-based electrodes play a crucial role in various transparent conductive oxide (TCO) applications. Among the p-type materials, nickel oxide is a promising electrically conductive material due to its good stability, large bandgap, and deep valence band. Here, we display pristine and 3 at.%V-doped NiO synthesized by the solvothermal decomposition method. The properties of both the pristine and 3 at.%V:NiO nanoparticles were characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffractometry (XRD), Raman spectroscopy, ultraviolet-visible spectroscopy (UV-vis), and X-ray photoelectron spectroscopy (XPS). The film properties were characterized by atomic force microscopy (AFM) and a source meter. Our results suggest that incorporation of vanadium into the NiO lattice significantly improves both electrical conductivity and hole extraction. Also, 3 at.%V:NiO exhibits a lower crystalline size when compared to pristine nickel oxide, which maintains the reduction of surface roughness. These results indicate that vanadium is an excellent dopant for NiO.

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