Article
Materials Science, Ceramics
Men Guo, Xia Zhao, Weidong Shi, Boyu Zhang, Kangning Wu, Jianying Li
Summary: Doping NiO in ZnO varistor ceramics can improve their electrical properties and long-term stability simultaneously. This improvement is achieved by manipulating point defects to reduce zinc interstitial density and increase oxygen vacancy density.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2022)
Article
Chemistry, Physical
Jianqun Geng, Lei Gao, Baijin Li, Hangjing Zhou, Jianchen Lu, Jinming Cai
Summary: In this study, the researchers systematically investigated the contact properties between Cu2Se monolayer and a series of experimentally fabricated 2D metals. They found that H-NbSe2 is the most adaptable electrode for monolayer Cu2Se and discovered the fermi level pinning effects in these metal-semiconductor junctions.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Jyi-Tsong Lin, Hong-Syue Ho
Summary: This article presents a novel heterostructure tunnel field-effect transistor with a Schottky contact drain and a gate over the source metal overlap. It achieves higher tunneling probability and subthreshold swing with a complete gate to-source metal overlap. The proposed hetero Ge-GaAs structure mitigates the drawbacks of a Ge-only structure and suppresses leakage current and trap-assisted tunneling effect. The experimental results demonstrate that this transistor is suitable for ultralow-power Internet of Things applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Physical
M. Al Huwayz, D. A. Jameel, Walter M. de Azevedo, Jorlandio F. Felix, N. Al Saqri, O. M. Lemine, S. Abu Alrub, M. Henini
Summary: This study investigates the impact of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on both GaAs (Sample A) and Si (Sample B) substrates using molecular beam epitaxy. The results show that the electrical properties of the lasers change due to gamma radiation exposure, and the extent of the change depends on the substrate used for growth. Furthermore, this study highlights the importance of considering substrate materials in the design of radiation-hardened electronic devices.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2023)
Article
Physics, Applied
Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Toshiyuki Oishi, Makoto Kasu
Summary: Line-shaped defects were observed in halide vapor-phase epitaxial (001) beta-Ga2O3 SBDs, and these defects were found to be related to the reverse leakage current. Atomic force microscopy observation and simulation results showed that the formation of line-shaped defects originated from a dislocation network near the crystal surface.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Jun-Dar Hwang, Zi-Jun Hong
Summary: The study showed that inserting a thin MgO layer between Au and annealed-ZnO in Schottky-barrier diodes can significantly reduce leakage current and enhance rectification ratio, leading to an increased Schottky-barrier height.
MATERIALS RESEARCH BULLETIN
(2021)
Article
Nanoscience & Nanotechnology
David Esseni, Daniel Lizzit, Pedram Khakbaz, Francesco Driussi, Marco Pala
Summary: High contact resistance between metallic conductors and 2D semiconductors is a major challenge in nanoscale electronic devices. This study investigates the physical properties and electrical resistance of various metal contacts to monolayer MoS2 and WSe2. The interaction between metal and semiconductor orbitals can induce gap states, increase the Schottky barrier height, and degrade contact resistance.
ACS APPLIED NANO MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Dae-Hwan Ahn, Suman Hu, Kyeol Ko, Donghee Park, Hoyoung Suh, Gyu-Tae Kim, Jae-Hoon Han, Jin-Dong Song, YeonJoo Jeong
Summary: This paper proposes a highly efficient charge trap synapse using III-V materials-based tunnel field-effect transistor (TFET), which achieves a faster synaptic update speed and lower energy consumption compared to conventional MOSFET-based synapses.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Pengkang Xie, Ziyue Wang, Kangning Wu
Summary: This paper investigates the evolution of the double Schottky barrier during the sintering process and finds that the morphology of the samples changes little below 800 degrees C. Significant enhancement of the Schottky barrier height and electrical properties occurs in the temperature range between 600 degrees C and 800 degrees C. Oxygen vacancy is found to be more sensitive to the sintering process than zinc interstitial.
Article
Nanoscience & Nanotechnology
Shouhui Zhu, Bai Sun, Guangdong Zhou, Tao Guo, Chuan Ke, Yuanzheng Chen, Feng Yang, Yong Zhang, Jinyou Shao, Yong Zhao
Summary: Since memristors have the potential to integrate nonvolatile memory and advanced computing technology, they are considered promising for next-generation artificial intelligence. Flexible memristors have shown great prospects in wearable electronics and e-skin, but further research on their physical mechanism is needed. In this study, a flexible memristive device was fabricated, and it exhibited remarkable analog switching characteristics similar to synaptic behavior. Through detailed analysis, it was confirmed that the analog switching characteristics of the device are mainly caused by carrier tunneling.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Multidisciplinary
Jie Sun, Haoyun Dou, Jiancai Leng, Fubao Zheng, Guangping Zhang
Summary: The study explores two-dimensional metallic VS2 as a promising electrode material for MoS2 based devices by theoretically evaluating the contact barrier at the VS2/MoS2 interface. It is found that a p-type Ohmic contact is formed at the interface and proper stacking order can avoid tunneling barrier. Additionally, atom intercalation strategy can change the contact nature and weaken the tunneling barrier, leading to n-type Ohmic contact between the electrode and MoS2 channel through Na and Mg intercalation.
Article
Engineering, Electrical & Electronic
Ji-Man Yu, Seong-Yeon Kim, Jin-Ki Kim, Joon-Kyu Han, Seung-Bae Jeon, Yang-Kyu Choi
Summary: This study demonstrates a triple-node FinFET (TriNo-FinFET) with non-ohmic Schottky junctions for an artificial synapse. The TriNo-FinFET utilizes three mechanisms: thermionic emission in a subthreshold region, tunneling in a transition region, and drift transport in an inversion region. The transition region, dominated by tunneling with non-ohmic Schottky junctions, improves the linearity of potentiation and depression. An average recognition rate of 90% for handwritten digits in the MNIST dataset is achieved. Moreover, the TriNo-FinFET with a double-layered charge trap layer (CTL) shows enhanced weight-update speed by up to 48-fold compared to that with a single-layered CTL.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Physical
Anil U. Kumar, Asis Sethi, Reen Maria Lawrence, Vishal M. Dhavale
Summary: A Co-Co3O4/NC catalyst with high stability and low overvoltage has been synthesized and shown to be efficient for both the oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) in alkaline conditions, potentially leading to energy savings compared to traditional Pt/C and IrO2 catalysts.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2021)
Article
Engineering, Electrical & Electronic
Qicai Ge, Min Zhu, Xiaoting Gao, Yan Zhao, Gaoxu Feng
Summary: A ZnO/Ag double Schottky junction tunnel effect transistor was fabricated using radio frequency magnetron sputtering. ZnO was used as the active layer and the electrical characteristics of the specimen were analyzed. The device showed excellent high-current output, with a drain-source current of 8.0 x10(-3) A and a switch current ratio of 4.8 x10(4) when the gate bias was 0.2 V and the drain-source voltage was 3 V. The device also had a small output resistance and large voltage amplification.
JOURNAL OF ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Zilong Wu, Yuhan Zhu, Feng Wang, Chuyun Ding, Yanrong Wang, Xueying Zhan, Jun He, Zhenxing Wang
Summary: By constructing vertical metal-semiconductor-metal structures and setting them into a low-resistance state, we successfully reduce the contact resistance of two-dimensional semiconductors and improve their current density. This strategy is applicable to various two-dimensional semiconductors and contact metals, demonstrating good stability and wide application potential.
Article
Multidisciplinary Sciences
Zhongqiang Wang, Tao Zeng, Yanyun Ren, Ya Lin, Haiyang Xu, Xiaoning Zhao, Yichun Liu, Daniele Ielmini
NATURE COMMUNICATIONS
(2020)
Article
Materials Science, Multidisciplinary
Ya Lin, Zhongqiang Wang, Xue Zhang, Tao Zeng, Liang Bai, Zhenhui Kang, Changhua Wang, Xiaoning Zhao, Haiyang Xu, Yichun Liu
NPG ASIA MATERIALS
(2020)
Article
Physics, Applied
Ya Lin, Jilin Liu, Jiajuan Shi, Tao Zeng, Xuanyu Shan, Zhongqiang Wang, Xiaoning Zhao, Haiyang Xu, Yichun Liu
Summary: A low-power ZnO-based memristive synapse achieved by N-doping shows promising performance with energy consumption as low as 60 fJ per synaptic event. Essential synaptic learning functions have been demonstrated, and the device can still operate effectively even in bent states.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Tao Zeng, Xiaoqin Zou, Zhongqiang Wang, Guangli Yu, Zhi Yang, Huazhen Rong, Chi Zhang, Haiyang Xu, Ya Lin, Xiaoning Zhao, Jiangang Ma, Guangshan Zhu, Yichun Liu
Summary: The zeolite-based memristive synapse demonstrates ultra-low energy consumption and controllable memory effects, suitable for simulating neural networks and cognitive functions.
Article
Chemistry, Multidisciplinary
Ziyang Wang, Wenjian Wang, Tao Zeng, Dan Ma, Panpan Zhang, Siqi Zhao, Li Yang, Xiaoqin Zou, Guangshan Zhu
Summary: A covalent-linking strategy was used to enhance the interface compatibility of a ZIF-8-based membrane for propylene separation. The resulting ZIF-8-CN@tPIM-1 membrane showed significantly improved propylene permeation property and selectivity, with high C3H6 permeability.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Xuanyu Shan, Chenyi Zhao, Xinnong Wang, Zhongqiang Wang, Shencheng Fu, Ya Lin, Tao Zeng, Xiaoning Zhao, Haiyang Xu, Xintong Zhang, Yichun Liu
Summary: The study developed a plasmonic optoelectronic memristor capable of combining sensing and processing functions, demonstrating synaptic plasticity and image recognition under visible and ultraviolet light stimulations. The device offers fully light-modulated capability, potentially advancing efficient neuromorphic vision.
Article
Physics, Applied
Yankun Cheng, Ya Lin, Tao Zeng, Xuanyu Shan, Zhongqiang Wang, Xiaoning Zhao, Daniele Ielmini, Haiyang Xu, Yichun Liu
Summary: This work demonstrates the implementation of Pavlovian conditioning through memristive synapse at the hardware level, paving the way for neuromorphic computing. By using the one-transistor/one-resistor architecture, the acquisition and extinction of Pavlovian conditioning were successfully demonstrated. The temporal relation between the conditioned and unconditioned stimuli was also established. This study provides a new approach to memristive neuromorphic computing.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Tao Zeng, Riya Su, Ye Tao, Ya Lin, Xuanyu Shan, Yankun Cheng, Zhongqiang Wang, Xiaoning Zhao, Haiyang Xu, Yichun Liu
Summary: This study proposes a photocatalytic method to develop a nanoporous PVC/TiO2 nanocomposite for improving the resistive switching reliability of organic ECM memory. The method effectively simplifies the morphology of metal conductive filaments, resulting in excellent uniformity, good retention, and low cycling degradation. Additionally, alphabetic data storage and image pattern recognition are successfully achieved using multilevel resistive switching behavior and an artificial neural network (ANN) with a 200 x 200 memristive array.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Xu Han, Xiaoli Zhao, Tao Zeng, Yahan Yang, Hongyan Yu, Cong Zhang, Bin Wang, Xiaoqian Liu, Tao Zhang, Jing Sun, Xinyuan Li, Tuo Zhao, Mingxin Zhang, Yanping Ni, Yanhong Tong, Qingxin Tang, Yichun Liu
Summary: This paper presents a multimodal-synergistic-modulation neuromorphic imaging system based on ultraflexible synaptic transistors, which successfully simulates dry eye imaging behavior and important functions of the human visual system. It simplifies the complexity of traditional neuromorphic visual systems and plays a positive role in biomedical eye care.
Article
Engineering, Electrical & Electronic
Xu Han, Junru Zhang, Tao Zeng, Xiaoli Zhao, Juntong Li, Hongying Sun, Yi Cao, Yanhong Tong, Qingxin Tang, Yichun Liu
Summary: In this study, an organic synaptic transistor (OST) based on natural pullulan was developed with super-flexibility and high transmittance (about 83.3%). It can achieve conformal and non-destructive attachment to arbitrary-shaped objects without affecting viewing, and successfully simulate various synaptic behaviors even under extreme bending, demonstrating outstanding mechanical stability.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Tao Zeng, Zhongqiang Wang, Ya Lin, YanKun Cheng, Xuanyu Shan, Ye Tao, Xiaoning Zhao, Haiyang Xu, Yichun Liu
Summary: This study demonstrates the functions of azimuth detection and velocity detection in a WOx-based memristive synapse, which mimics auditory motion perception in neuromorphic auditory systems. The WOx memristor with both volatile and semi-nonvolatile modes enables high-pass filtering and spike train processing with relative timing and frequency shift. Particularly, the emulation of Doppler frequency-shift information processing for velocity detection in the WOx memristor-based auditory system is achieved through triplet spike-timing-dependent-plasticity. These findings open new possibilities for the mimicry of auditory motion perception and the application of auditory sensory systems in future neuromorphic sensing.
Article
Chemistry, Multidisciplinary
Pan-Ke Zhou, Xiao-Li Lin, Mun Yin Chee, Wen Siang Lew, Tao Zeng, Hao-Hong Li, Xiong Chen, Zhi-Rong Chen, Hui-Dong Zheng
Summary: The use of crystalline metal-organic complexes with definite structures as multilevel memories is significant for designing the next generation of memories. In this study, different Zn-polysulfide complexes were fabricated as memory devices, showing either bipolar binary memory performances or non-volatile ternary memory performances. The deep structure-property correlation in this work provides a new strategy for implementing multilevel memory by triggering polysulfide relaxation based on the conjugated degree regulation of organic ligands.
MATERIALS HORIZONS
(2023)
Article
Physics, Condensed Matter
Jiajuan Shi, Ya Lin, Tao Zeng, Zhongqiang Wang, Xiaoning Zhao, Haiyang Xu, Yichun Liu
Summary: The study introduces a WOx-based memristive device capable of mimicking voltage-dependent synaptic plasticity, demonstrating short-term and long-term plasticity. The experiment shows long-term enhancement of conductance induced by high intensity stimulation, representing permanent memory behavior, as well as Boolean operations in the synaptic array.
JOURNAL OF SEMICONDUCTORS
(2021)
Article
Chemistry, Multidisciplinary
Tao Zeng, Zhi Yang, Jiabing Liang, Ya Lin, Yankun Cheng, Xiaochi Hu, Xiaoning Zhao, Zhongqiang Wang, Haiyang Xu, Yichun Liu
Summary: This study presents a flexible and transparent memristive synapse based on PVP/NCQD nanocomposites, which successfully emulate diverse synaptic functions and demonstrate excellent mechanical strain adaptability.
NANOSCALE ADVANCES
(2021)
