Journal
ACS PHOTONICS
Volume 7, Issue 7, Pages 1636-1641Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.0c00528
Keywords
aluminum nitride; single photon source; quantum optics; room temperature
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Funding
- Ser Cymru National Research Network in Advanced Engineering and Materials
- European Union's Horizon 2020 research and innovation program
- Royal Society [RGS191251]
- EPSRC [EP/T017813/1]
- EPSRC [EP/M020479/1, EP/T017813/1] Funding Source: UKRI
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A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright (>10(5) counts s(-1)), pure (g((2)) (0) < 0.2), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.
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