Journal
NANO LETTERS
Volume 20, Issue 8, Pages 5807-5813Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c01693
Keywords
carrier multiplication; impact ionization; transition metal dichalcogenides (TMDCs); 2D materials; MoTe2; terahertz spectroscopy
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We report efficient photoconductivity multiplication in few-layer 2H-MoTe2 as a direct consequence of an efficient steplike carrier multiplication with near unity quantum yield and high carrier mobility (similar to 45 cm(2) V-1 s(-1)) in MoTe2. This photoconductivity multiplication is quantified using ultrafast, excitation-wavelength dependent photoconductivity measurements employing contact-free terahertz spectroscopy. We discuss the possible origins of efficient carrier multiplication in MoTe2 to guide future theoretical investigations. The combination of photoconductivity multiplication and the advantageous bandgap renders MoTe2 as a promising candidate for efficient optoelectronic devices.
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