Journal
MATERIALS RESEARCH BULLETIN
Volume 126, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2020.110841
Keywords
BiCuSeO; Sm doping; Thermoelectric properties; First-principles calculations
Categories
Funding
- National Key Research and Development Program of China [2017YFA0403803]
- National Natural Science Foundation of China [51774065, 51525401, 51690163, 51971052]
- LiaoNing Revitalization Talents Program [XLYC1808005]
- Fundamental Research Funds for the Central Universities
Ask authors/readers for more resources
Here, the effects of variable-valence element Sm doping on the thermoelectric performance of BiCuSeO are studied. The Bi1-xSmxCuSeO (x = 0, 0.025, 0.05, and 0.10) oxyselenides were prepared by a two-step solid state reaction and spark plasma sintering. Experimental measurements and first-principles calculations indicated that Sm2+ and Sm3+ coexisted in the samples. The electrical conductivity of the Sm-doped samples was greater than that of pristine BiCuSeO mainly because the holes introduced by Sm2+ doping increased the carrier concentration, and the shift of the Fermi level by Sm(3+ )substitution changed the band gap. The combination of a moderate Seebeck coefficient and relativity low thermal conductivity, gave a maximum ZT value of 0.65 at 823 K for Bi0.975Sm0.025CuSeO, which is approximately 25 % higher than that of the pristine sample. This study indicates that doping with rare-earth variable-valence elements is an efficient approach to designing high-performance thermoelectric materials.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available