The effect of low-angle off-axis GaN substrate orientation on the surface morphology of Mg-doped GaN epilayers

Influence of substrate misorientation on the optical properties of Mg-doped GaN

(2020) Hanxiao Liu et al.   JOURNAL OF APPLIED PHYSICS

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

(2019) Hanxiao Liu et al.   APPLIED PHYSICS LETTERS

Influence of substrate misorientation on carbon impurity incorporation and electrical properties of p-GaN grown by metalorganic chemical vapor deposition

(2019) lingrong Jiang et al.   Applied Physics Express

Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth

(2016) Nils. A.K. Kaufmann et al.   JOURNAL OF CRYSTAL GROWTH

Progress in bulk GaN growth

(2015) Ke Xu et al.   Chinese Physics B

Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN

(2013) Hiroshi Amano   JAPANESE JOURNAL OF APPLIED PHYSICS

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

(2013) F. Oehler et al.   JOURNAL OF CRYSTAL GROWTH

Bulk GaN crystals grown by HVPE

(2009) Kenji Fujito et al.   JOURNAL OF CRYSTAL GROWTH

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

(2008) T. Suski et al.   APPLIED PHYSICS LETTERS