Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP
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Title
Effect of hydride vapor phase epitaxy growth conditions on the degree of atomic ordering in GaInP
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 128, Issue 2, Pages 025704
Publisher
AIP Publishing
Online
2020-07-14
DOI
10.1063/5.0010680
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Related references
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- Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP
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- (2010) D.J. Friedman CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
- Tailoring the electronic properties of GaxIn1−xP beyond simply varying alloy composition
- (2009) Yong Zhang et al. APPLIED PHYSICS LETTERS
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