Journal
CHEMICAL RESEARCH IN CHINESE UNIVERSITIES
Volume 36, Issue 4, Pages 703-708Publisher
HIGHER EDUCATION PRESS
DOI: 10.1007/s40242-020-0177-0
Keywords
Black phosphorous; beta-Gallium oxide; van der Waals heterostructure; Dual-band photodetector
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Funding
- Vacuum Interconnected Nanotech Workstation(Nano-X) of Suzhou Institute of Nano-tech and Nano-bionics(SINANO)
- Chinese Academy of Sciences
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In recent decades, dual-band photodetectors have received widespread attention due to better target identification, which are considered as the development trend of next generation photodetectors. However, the traditional dual-band photodetectors based on heteroepitaxial growth, superlattice and multiple quantum well structures are limited by complex fabrication process and low integration. Herein, we report a UV/IR dual-band photodetector by integrating ultra-wide gap beta-Ga(2)O(3)and narrow-gap black phosphorous(BP) nanoflakes. A vertical van der Waals (vdW) heterostructure is formed between BP and beta-Ga(2)O(3)by mechanically exfoliated method integrated without the requirement of lattice match. The heterostructure devices show excellent rectification characteristics with high rectifying ratio ofca.10(6)and low reverse current around pA. Moreover, the device displays obvious photoresponse under UV and IR irradiations with responsivities of 0.87 and 2.15 mA/W, respectively. We also explore the band alignment transit within the heterostructure photodetector at different bias voltages. This work paves the way for fabricating novel dual-band photodetectors by utilizing 2D materials.
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