4.7 Article

Poly(arylene ether nitrile) ternary dielectric composites modulated via polydopamine-assisted BaTiO3 decorating MoS2 sheets

Journal

CERAMICS INTERNATIONAL
Volume 46, Issue 11, Pages 19181-19190

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2020.04.253

Keywords

Polymer composites; Dielectric properties; Permittivity-temperature stability; Multiple interfaces

Funding

  1. Funding for Jiangsu Provincial Department of Education [18KJA430016]
  2. school-level research projects of Yancheng Institute of Technology [154203625]

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Flexible, high-k and thermostability polymer-based dielectric composites are the core components in electro-static capacitors and embedded devices. Herein, the dielectric polymer matrix composites are developed by embedding polydopamine (PDA)-encapsulated hydroxylated barium titanate (BTH) and molybdenum disulfide (MoS2) into poly(arylene ether nitrile) (PEN) matrix. The MoS2/PDA@BTH-1 particles served as fillers are prepared by polydopamine deposition technology assisted with hydrogen bonding interactions. The introduction of PDA intermediate layer contributes to the construction of multiple interfaces and nanocapacitor networks, enhancing interfacial polarization. Based on this, the resulted dielectric composite with 15 wt% MoS2/PDA@ BTH-1 loading exhibits the dielectric constant of 17.3 at 1 kHz, higher than that of 4.2 of PEN, while can maintain relatively low dielectric loss simultaneously. The possible mechanisms and synergistic enhancement effect of MoS2/PDA@BTH-1 particles on the dielectric properties of composites are also proposed. The results of permittivity-temperature stability show that the dielectric constant of PEN-based dielectric composites is stable when reaches 158 degrees C, indicating that the film can be used in capacitor at temperatures up to 150 degrees C, higher than that of most polymer capacitors. All in all, a feasible pathway is provided to design PEN-based dielectric composites with high-k to adopt the high-temperature environment in electrostatic capacitors and embedded devices.

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