Fabrication of MAPbBr3Single Crystal p-n Photodiode and n-p-n Phototriode for Sensitive Light Detection Application

In this study, MAPbBr(3)single crystal (MSC) p-n perovskite homojunction photodiode and n-p-n phototriode are successfully fabricated through controlled incorporation of Bi(3+)ions in solution. Optoelectronic analysis reveals that the photodiode shows typical photovoltaic behavior and the best photovoltaic performance can be achieved when the n-type MSC is grown in 0.3% Bi(3+)feed solution. The as-assembled p-n MSC photovoltaic detector displays obvious sensitivity to 520 nm illumination, with a high responsivity of up to 0.62 A W(-1)and a specific detectivity of 2.16 x 10(12)Jones, which surpass many those of MSC photodetectors previously reported. Further performance optimization can be realized by constructing an n-p-n phototriode using the same growth method. The photocurrent magnification rate of the as-fabricated n-p-n phototriode can reach a maximum value of 2.9 x 10(3). Meanwhile, a higher responsivity of 14.47 A W-1, specific detectivity of 4.67 x 10(13)Jones, and an external quantum efficiency of up to 3.46 x 10(3)are achieved under an emitter-collector bias of 8 V. These results confirm that the present p-n and n-p-n MSC homojunctions are promising device configurations, which may find potential application in future optoelectronic devices and systems.