Journal
ACS NANO
Volume 14, Issue 9, Pages 11190-11204Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.0c02738
Keywords
graphene; photodetectors; photothermoelectric effect; polymeric dielectric; integrated photonics; optoelectronics
Categories
Funding
- European Union Graphene Flagship [785219, 881603]
- ERC
- EPSRC [EP/L016087/1, EP/K01711X/1, EP/K017144/1, EP/N010345/1]
- Government of Catalonia trough the SGR grant
- Spanish Ministry of Economy and Competitiveness, through the Severo Ochoa Programme for Centres of Excellence in RD [SEV2015-0522]
- Fundacio Cellex Barcelona
- Generalitat de Catalunya through the CERCA program
- Mineco grants Plan Nacional [FIS2016-81044-P]
- Agency for Management of University and Research Grants (AGAUR) [2017 SGR 1656]
- EPSRC [EP/K017144/1, EP/N010345/1, EP/K01711X/1] Funding Source: UKRI
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We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene/polymer/graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity similar to 8 X 10(10) cm(-2) at the charge neutrality point, and a large Seebeck coefficient similar to 140 mu V K-1, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices.
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