Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect

Published 2020 View Full Article

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Title
Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
Authors
Keywords
ZnO nanorod arrays, Piezotronic, InSe-based FET, Pressure sensor
Journal
Nano Energy
Volume 70, Issue -, Pages 104457
Publisher
Elsevier BV
Online
2020-01-09
DOI
10.1016/j.nanoen.2020.104457

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