Device characteristics of Ti2CT2 MXene-based field-effect transistor

Published 2020 View Full Article

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Title
Device characteristics of Ti2CT2 MXene-based field-effect transistor
Authors
Keywords
MXene, Field-effect transistor, NEGF, Quantum transport
Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 140, Issue -, Pages 106433
Publisher
Elsevier BV
Online
2020-02-12
DOI
10.1016/j.spmi.2020.106433

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