Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 117, Issue 22, Pages 11878-11886Publisher
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1922556117
Keywords
spin Hall effect; transition metal oxides; rational design
Categories
Funding
- NSF under the Grant NNCI ECCS (National Nanotechnology Coordinated Infrastructure Electrical, Communications and Cyber Systems) [1542159]
- NSF under the Grant EFRI-newLAW (Emerging Frontiers in Research and Innovation new light and acoustic wave propagation)
- NSF under the Grant NASCENT ERC (Nanomanufacturing Systems for Mobile Computing and Mobile Energy Technologies Engineering Research Center)
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1542159] Funding Source: National Science Foundation
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Spin Hall effect (SHE), a mechanism by which materials convert a charge current into a spin current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However, fundamental questions remain about the essential factors that determine SHE. Here, we solve this open problem, presenting a comprehensive theory of five rational design principles for achieving giant intrinsic SHE in transition metal oxides. Arising from our key insight regarding the inherently geometric nature of SHE, we demonstrate that two of these design principles are weak crystal fields and the presence of structural distortions. Moreover, we discover that antiperovskites are a highly promising class of materials for achieving giant SHE, reaching SHE values an order of magnitude larger than that reported for any oxide. Additionally, we derive three other design principles for enhancing SHE. Our findings bring deeper insight into the physics driving SHE and could help enhance and externally control SHE values.
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